| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 40 | |
| 5.4@10V | |
| 21.5@4.5V|45.5@10V | |
| 45.5 | |
| 3150@15V | |
| 5000 | |
| 8|12 | |
| 10|12 | |
| 34 | |
| 12|30 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The SI7634BDP-T1-E3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 5000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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