| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 35 | |
| 3.9@10V | |
| 122@10V | |
| 122 | |
| 6000@10V | |
| 3700 | |
| 28|10 | |
| 38|8 | |
| 75|80 | |
| 35|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this SI7615DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.