| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 5.6 | |
| 100 | |
| 1 | |
| 25@10V | |
| 16@10V | |
| 16 | |
| 4.4 | |
| 2.7 | |
| 1 | |
| 100 | |
| 3800 | |
| 12 | |
| 12 | |
| 30 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 21@10V|30@4.5V | |
| 3.8 | |
| 30 | |
| 81 | |
| 0.75 | |
| 3.8 | |
| 45 | |
| 1.2 | |
| 20 | |
| 8.7 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this SI7414DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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