| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±30 | |
| 4.5 | |
| 2.8 | |
| 100 | |
| 1 | |
| 1200@10V | |
| 6.5@10V | |
| 6.5 | |
| 243@75V | |
| 3200 | |
| 10 | |
| 11 | |
| 11 | |
| 7 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SI7317DN-T1-GE3 power MOSFET. Its maximum power dissipation is 3200 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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