VishaySI7148DP-T1-GE3MOSFET
SI7148DP-T1-GE3 Vishay MOSFETs Transistor N-CH 75V 28A 8-Pin PowerPAK SO T/R - Arrow.com
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 75 | |
| ±20 | |
| 2.5 | |
| 28 | |
| 100 | |
| 1 | |
| 11@10V | |
| 33@4.5V|68@10V | |
| 68 | |
| 2900@35V | |
| 5400 | |
| 100|18 | |
| 255|46 | |
| 35|39 | |
| 33|17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI7148DP-T1-GE3 power MOSFET. Its maximum power dissipation is 5400 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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