| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Hex Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.4 | |
| -55 to 150 | |
| 6 | |
| 100 | |
| 1 | |
| 36@4.5V | |
| 12.5@4.5V|25@10V | |
| 25 | |
| 4 | |
| 2 | |
| 10 | |
| 1000@10V | |
| 195@10V | |
| 0.6 | |
| 225 | |
| 2300 | |
| 12 | |
| 20 | |
| 30 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 30@4.5V|34@3.6V|46@2.5V | |
| 2.3 | |
| 20 | |
| 95 | |
| 0.8 | |
| 1.5 | |
| 20 | |
| 1.2 | |
| 0.9 | |
| 9.2 | |
| 12 | |
| 6 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1(Max) mm |
| Largeur du paquet | 1.65 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | Chip FET |
| 8 | |
| Forme de sonde | Flat |
As an alternative to traditional transistors, the SI5457DC-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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