| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Hex Drain | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| ±8 | |
| 5.2 | |
| 33@4.5V | |
| 14@4.5V | |
| 1300 | |
| 50 | |
| 22 | |
| 75 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1(Max) mm |
| Largeur du paquet | 1.65 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | Chip FET |
| 8 |
Compared to traditional transistors, SI5445BDC-T1-E3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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