| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| -55 to 150 | |
| 12 | |
| 20@10V | |
| 15.5@4.5V|30@10V | |
| 30 | |
| 1400@15V | |
| 3100 | |
| 12|16 | |
| 33|10 | |
| 30|40 | |
| 47|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.8(Max) |
| Largeur du paquet | 1.9 |
| Longueur du paquet | 3 |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK ChipFET |
| 8 | |
| Forme de sonde | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The SI5419DU-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 3100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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