| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 6.9 | |
| 100 | |
| 1 | |
| 35@10V | |
| 4.5@4.5V|9.1@10V | |
| 9.1 | |
| 1.7 | |
| 1.8 | |
| 12 | |
| 530@15V | |
| 55@15V | |
| 1.5 | |
| 100 | |
| 2000 | |
| 32|10 | |
| 130|25 | |
| 12 | |
| 20|5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 29@10V|42@4.5V | |
| 2 | |
| 30 | |
| 110 | |
| 0.8 | |
| 3.7 | |
| 20 | |
| 1.2 | |
| 20 | |
| 5.9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This SI4936BDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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