| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 6.9 | |
| 100 | |
| 1 | |
| 35@10V | |
| 4.5@4.5V|9.1@10V | |
| 9.1 | |
| 1.7 | |
| 1.8 | |
| 12 | |
| 530@15V | |
| 55@15V | |
| 1.5 | |
| 100 | |
| 2000 | |
| 32|10 | |
| 130|25 | |
| 12 | |
| 20|5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 29@10V|42@4.5V | |
| 2 | |
| 30 | |
| 110 | |
| 0.8 | |
| 3.7 | |
| 20 | |
| 1.2 | |
| 20 | |
| 5.9 | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
This SI4936BDY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemas de drones más inteligentes
Equípese con potentes herramientas y estrategias inteligentes para diseñar los sistemas de drones ágiles, eficaces y modulares del futuro.