| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 175 | |
| 6 | |
| 100 | |
| 1 | |
| 22@10V | |
| 18@10V | |
| 18 | |
| 5.3 | |
| 3.4 | |
| 1 | |
| 110 | |
| 3300 | |
| 12 | |
| 10 | |
| 25 | |
| 10 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 18@10V|25@4.5V | |
| 40 | |
| 0.8 | |
| 50 | |
| 1.2 | |
| 0.5 | |
| 2.4 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This SI4850EY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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