| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| 20 | |
| 5.8@Channel 1|8.2@Channel 2 | |
| 18.5@10V@Channel 1|11.5@10V@Channel 2 | |
| 7.8@5V@Channel 1|11.6@5V@Channel 2 | |
| 1400@Channel 1|2400@Channel 2 | |
| 9@Channel 1|11@Channel 2 | |
| 9 | |
| 24@Channel 1|31@Channel 2 | |
| 11@Channel 1|13@Channel 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This SI4816BDY-T1-E3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1000@Channel 1|1250@Channel 2 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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