| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±25 | |
| 1.8 | |
| -55 to 150 | |
| 6.5 | |
| 100 | |
| 1 | |
| 18.5@10V | |
| 8.7@5V | |
| 3.5 | |
| 1.5 | |
| 0.8 | |
| 2500 | |
| 14 | |
| 12 | |
| 32 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 15.5@10V|23@4.5V | |
| 2.5 | |
| 40 | |
| 95 | |
| 0.75 | |
| 2.4 | |
| 30 | |
| 1.2 | |
| 0.5 | |
| 2.2 | |
| 25 | |
| 9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.38 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI4800BDY-T1-E3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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