25-50% de réduction
VishaySI4465ADY-T1-E3MOSFET
Trans MOSFET P-CH 8V 13.7A 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 13.7 | |
| 100 | |
| 1 | |
| 9@4.5V | |
| 55@4.5V | |
| 10 | |
| 6 | |
| 81 | |
| 0.45 | |
| 1300 | |
| 3000 | |
| 112 | |
| 170 | |
| 168 | |
| 33 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.5@4.5V|9.2@2.5V|13@1.8V | |
| 40 | |
| 0.57 | |
| 85 | |
| 1.2 | |
| 3.8 | |
| 8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This SI4465ADY-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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