50-75% de réduction
VishaySI4434DY-T1-E3MOSFET
Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 2.1 | |
| 155@10V | |
| 34@10V | |
| 34 | |
| 3100 | |
| 19 | |
| 23 | |
| 47 | |
| 16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This SI4434DY-T1-E3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1560 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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