| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 8.8 | |
| 100 | |
| 1 | |
| 12@10V | |
| 64@10V | |
| 64 | |
| 17 | |
| 11 | |
| 1 | |
| 500 | |
| 2500 | |
| 53 | |
| 13 | |
| 100 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 10@10V|15@4.5V | |
| 20 | |
| 11.4 | |
| 2.5 | |
| 50 | |
| 85 | |
| 0.8 | |
| 3.8 | |
| 41 | |
| 1.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.38 |
| Largeur du paquet | 3.9 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI4425BDY-T1-E3 power MOSFET can provide a solution. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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