10-25% de reduction
VishaySI4228DY-T1-GE3MOSFET
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 25 | |
| ±12 | |
| 1.4 | |
| 8 | |
| 100 | |
| 1 | |
| 18@10V | |
| 7.8@4.5V|16.5@10V | |
| 16.5 | |
| 790@12.5V | |
| 2000 | |
| 10 | |
| 12 | |
| 21 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this SI4228DY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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