| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 2.9 | |
| 100 | |
| 1 | |
| 216@10V | |
| 4.4@4.5V|7.7@10V | |
| 7.7 | |
| 2.5 | |
| 1.3 | |
| 35 | |
| 350@30V | |
| 30@30V | |
| 1 | |
| 40 | |
| 2000 | |
| 10|13 | |
| 12|60 | |
| 16|18 | |
| 45|5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 180@10V|240@4.5V | |
| 2 | |
| 8 | |
| 110 | |
| 0.8 | |
| 3.75 | |
| 28 | |
| 1.2 | |
| 2 | |
| 20 | |
| 20 | |
| 2.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
This SI3459BDV-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.