| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 6.3 | |
| 100 | |
| 1 | |
| 40@10V | |
| 2.8@4.5V|6@10V | |
| 6 | |
| 0.8 | |
| 1.1 | |
| 4 | |
| 325@15V | |
| 30@15V | |
| 1.2 | |
| 60 | |
| 1700 | |
| 11 | |
| 13 | |
| 16 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 33@10V|41@4.5V | |
| 1.7 | |
| 20 | |
| 120 | |
| 0.8 | |
| 2.7 | |
| 11 | |
| 1.2 | |
| 0.6 | |
| 5.6 | |
| 20 | |
| 5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
If you need to either amplify or switch between signals in your design, then Vishay's SI3456DDV-T1-E3 power MOSFET is for you. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.