| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 8 | |
| 10000 | |
| 1 | |
| 21@4.5V | |
| 43.2@4.5V|78.2@8V | |
| 4083@10V | |
| 2000 | |
| 58|64 | |
| 30|17 | |
| 174|210 | |
| 35|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Compared to traditional transistors, SI3429EDV-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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