| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 8 | |
| 10000 | |
| 1 | |
| 21@4.5V | |
| 43.2@4.5V|78.2@8V | |
| 4083@10V | |
| 2000 | |
| 58|64 | |
| 30|17 | |
| 174|210 | |
| 35|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.65 |
| Package Length | 3.05 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
Compared to traditional transistors, SI3429EDV-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2000 mW. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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