| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 8 | |
| 26@10V | |
| 4.2@4.5V|8.3@10V | |
| 8.3 | |
| 405@15V | |
| 2000 | |
| 8|9 | |
| 12|22 | |
| 16|15 | |
| 3|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.65 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this SI3424CDV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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