| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.85 | |
| -55 to 150 | |
| 2.6 | |
| 100 | |
| 0.1 | |
| 57@4.5V | |
| 3.5@4.5V | |
| 0.45 | |
| 0.6 | |
| 2 | |
| 0.4 | |
| 40 | |
| 860 | |
| 7 | |
| 7 | |
| 30 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 45@4.5V|56@2.5V | |
| 10 | |
| 0.7 | |
| 8.5 | |
| 1.2 | |
| 2 | |
| 8 | |
| 8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the SI2302CDS-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 710 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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