| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±10 | |
| -55 to 150 | |
| 4 | |
| 41@4.5V | |
| 12.5@4.5V|22@8V | |
| 1600 | |
| 560|600 | |
| 300|90 | |
| 1620|2500 | |
| 150|50 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 6 | |
| Forme de sonde | Gull-wing |
If you need to either amplify or switch between signals in your design, then Vishay's SI1441EDH-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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