| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±12 | |
| 1.55 | |
| 1.2 | |
| 99@4.5V | |
| 3.5@4.5V|3.8@5V | |
| 0.98 | |
| 1.1 | |
| 18.43 | |
| 385@15V | |
| 55 | |
| 236 | |
| 6 | |
| 22 | |
| 14 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 82@4.5V|116@2.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.6(Max) mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.7(Max) mm |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | SC-89 |
| 6 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI1070X-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 236 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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