| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±6 | |
| -55 to 150 | |
| 0.5 | |
| 700@4.5V | |
| 0.75@4.5V | |
| 275 | |
| 11 | |
| 5 | |
| 25 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.8(Max) |
| Largeur du paquet | 0.95(Max) |
| Longueur du paquet | 1.7(Max) |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | SC-89 |
| 3 |
Use Vishay's SI1012X-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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