onsemiSBC817-40LT1GGP BJT

Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Design various electronic circuits with this versatile NPN SBC817-40LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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Quantity Increments of 3000 Minimum 30000
  • Manufacturer Lead Time:
    25 semaines
    • Price: $0.0258
    1. 30000+$0.0258
    2. 75000+$0.0238

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