NXP SemiconductorsPBSS4160QAZGP BJT
Trans GP BJT NPN 60V 1A 1000mW 3-Pin DFN-D EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 7 | |
| 1@50mA@500mA|1.05@50mA@1A|1.1@100mA@1A | |
| 0.125@50mA@500mA|0.245@50mA@1A|0.235@100mA@1A | |
| 1 | |
| 100 | |
| 230@100mA@2V|150@500mA@2V|85@1A@2V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.36(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 1.1 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN-D EP |
| 3 |
If you require a general purpose BJT that can handle high voltages, then the NPN PBSS4160QAZ BJT, developed by NXP Semiconductors, is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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