| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 2.1 | |
| 0.19 | |
| 2000 | |
| 1 | |
| 4500@10V | |
| 0.33@4.5V | |
| 15@10V | |
| 325 | |
| 5 | |
| 7 | |
| 11 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this NX7002AK,215 power MOSFET from NXP Semiconductors. Its maximum power dissipation is 325 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology.
| EDA / CAD Models |
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