onsemiNVJD5121NT1GMOSFET
Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 60 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 0.295 | |
| 10000 | |
| 1 | |
| 1600@10V | |
| 0.9@4.5V | |
| 26@20V | |
| 266 | |
| 32 | |
| 34 | |
| 34 | |
| 22 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.25 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 |
This NVJD5121NT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 319 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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