10-25% de reduction
onsemiNTZS3151PT1GMOSFET
Trans MOSFET P-CH 20V 0.86A 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 0.86 | |
| 150@4.5V | |
| 5.6@4.5V | |
| 458@16V | |
| 210 | |
| 18 | |
| 12 | |
| 23.7 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55 mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-563 |
| 6 | |
| Forme de sonde | Flat |
Compared to traditional transistors, NTZS3151PT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 170 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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