| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Enhancement | |
| P|N | |
| 2 | |
| 20 | |
| ±6 | |
| 0.43@P Channel|0.54@N Channel | |
| 900@4.5V@P Channel|550@4.5V@N Channel | |
| 1.7@4.5V@P Channel|1.5@4.5V@N Channel | |
| 105@16V@P Channel|80@16V@N Channel | |
| 250 | |
| 19@P Channel|8@N Channel | |
| 12@P Channel|4@N Channel | |
| 35@P Channel|16@N Channel | |
| 10@P Channel|6@N Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55 mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-563 |
| 6 | |
| Forme de sonde | Flat |
Make an effective common source amplifier using this NTZD3155CT2G power MOSFET from ON Semiconductor. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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