| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 1.5 | |
| -55 to 150 | |
| 1.2 | |
| 100 | |
| 1 | |
| 150@10V | |
| 4.8@4.5V|10.1@10V | |
| 10.1 | |
| 1.5 | |
| 1.1 | |
| 7 | |
| 430@15V | |
| 40@15V | |
| 0.7 | |
| 55 | |
| 350 | |
| 6.7|7.1 | |
| 5.2|6.7 | |
| 16.2|19.9 | |
| 7.7|5.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 90@10V|110@4.5V|165@2.5V | |
| 3.5 | |
| 5 | |
| 425 | |
| 0.8 | |
| 2 | |
| 12 | |
| 1 | |
| 1.15 | |
| 12 | |
| 1.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85 mm |
| Largeur du paquet | 1.24 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's NTS4173PT1G power MOSFET can provide a solution. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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