| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| GaN | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±18 | |
| 2.6 | |
| 9 | |
| 100 | |
| 60 | |
| 350@8V | |
| 6.2@4.5V | |
| 760@400V | |
| 65000 | |
| 4.5 | |
| 4 | |
| 10 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 9.28(Max) mm |
| Largeur du paquet | 4.82(Max) mm |
| Longueur du paquet | 10.53(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, NTP8G202NG power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 65000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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