| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| GaN | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±18 | |
| 2.6 | |
| 9 | |
| 100 | |
| 60 | |
| 350@8V | |
| 6.2@4.5V | |
| 760@400V | |
| 65000 | |
| 4.5 | |
| 4 | |
| 10 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 9.28(Max) mm |
| Package Width | 4.82(Max) mm |
| Package Length | 10.53(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 | |
| Lead Shape | Through Hole |
Compared to traditional transistors, NTP8G202NG power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 65000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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