| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 63 | |
| 12.4@10V | |
| 31@10V | |
| 31 | |
| 1680@25V | |
| 107000 | |
| 4.6 | |
| 6.4 | |
| 18 | |
| 10 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.9 mm |
| Largeur du paquet | 4.45 mm |
| Longueur du paquet | 10.1 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of ON Semiconductor's NTP5864NG power MOSFET. Its maximum power dissipation is 107000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.