| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 220 | |
| 3@10V | |
| 220@10V | |
| 220 | |
| 13216@25V | |
| 283000 | |
| 144 | |
| 58 | |
| 98 | |
| 25 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.9 mm |
| Largeur du paquet | 4.45 mm |
| Longueur du paquet | 10.1 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Make an effective common gate amplifier using this NTP5860NLG power MOSFET from ON Semiconductor. Its maximum power dissipation is 283000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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