| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 19 | |
| 100 | |
| 10 | |
| 4.8@10V | |
| 58@10V | |
| 58 | |
| 4200@50V | |
| 3400 | |
| 11 | |
| 46 | |
| 29 | |
| 16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 5 |
| Conditionnement du fournisseur | SO-FL EP |
| 5 | |
| Forme de sonde | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's NTMFS6B03NT1G power MOSFET can provide a solution. Its maximum power dissipation is 3400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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