| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 13.5 | |
| 100 | |
| 1 | |
| 6.72@11.5 V | |
| 11.3@4.5V|24.4@11.5V | |
| 1565@12V | |
| 5700 | |
| 4.9|2.9 | |
| 23.3|20.6 | |
| 14.1|21.9 | |
| 12.1|7.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 5 |
| Conditionnement du fournisseur | SO-FL EP |
| 5 | |
| Forme de sonde | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTMFS4841NHT1G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 5700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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