| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 20 | |
| 3.5@11.5V | |
| 22@4.5V|52@11.5V | |
| 3100@12V | |
| 2270 | |
| 10|13 | |
| 23|31 | |
| 30|22 | |
| 10|16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 5 |
| Conditionnement du fournisseur | SO-FL EP |
| 5 | |
| Forme de sonde | No Lead |
Looking for a component that can both amplify and switch between signals within your circuit? The NTMFS4835NT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 62500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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