| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 30@N Channel|20@P Channel | |
| ±20@N Channel|±12@P Channel | |
| 1.5 | |
| -55 to 150 | |
| 0.25@N Channel|0.88@P Channel | |
| 1000 | |
| 1 | |
| 1500@4.5V@N Channel|260@4.5V@P Channel | |
| 0.9@5V@N Channel|2.2@4.5V@P Channel | |
| 0.2@N Channel|0.65@P Channel | |
| 0.3@N Channel|0.5@P Channel | |
| 20@5V@N Channel|155@20V@P Channel | |
| 7.25@5V@N Channel|18@20V@P Channel | |
| 0.8@N Channel|0.45@P Channel | |
| 19@N Channel|25@P Channel | |
| 270 | |
| 78@N Channel|3.5@P Channel | |
| 66@N Channel|6.5@P Channel | |
| 13.5@P Channel|56@N Channel | |
| 15@N Channel|5.8@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1500@2.5V|1000@4.5V@N Channel|345@2.5V|215@4.5V@P Channel | |
| 0.27 | |
| 0.5@N Channel|3@P Channel | |
| 460 | |
| 0.65@N Channel|0.8@P Channel | |
| 2.3@N Channel|2@P Channel | |
| 12.4@N Channel|10.6@P Channel | |
| 0.7@N Channel|1.2@P Channel | |
| 1.2@N Channel|0.61@P Channel | |
| 20@N Channel|12@P Channel | |
| 0.25@N Channel|0.88@P Channel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 | |
| Forme de sonde | Gull-wing |
This NTJD4158CT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 270 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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