| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 10 | |
| 100 | |
| 1 | |
| 50@4.5V | |
| 15@4.5V | |
| 6 | |
| 1.7 | |
| 36 | |
| 900@16V|940@10V | |
| 90@16V|110@10V | |
| 0.4 | |
| 350|410 | |
| 8300 | |
| 60|50 | |
| 30|25 | |
| 60|75 | |
| 8|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 44@4.5V|57@2.5V | |
| 35 | |
| 160 | |
| 0.82 | |
| 1.6 | |
| 42 | |
| 1.2 | |
| 0.7 | |
| 8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.57 mm |
| Largeur du paquet | 3.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the NTF6P02T3G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 8300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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