| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2.5 | |
| 11.3 | |
| 9.3@10V | |
| 17.8@10V|9@4.5V | |
| 17.8 | |
| 4.1 | |
| 3.4 | |
| 2.7 | |
| 990@12V | |
| 253 | |
| 1950 | |
| 2|3.6 | |
| 16.5|19.7 | |
| 20.2|13.5 | |
| 7|11.5 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this NTD4863NT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1950 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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