| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2.5 | |
| 16.8 | |
| 4.7@10V | |
| 18@4.5V|38@10V | |
| 38 | |
| 6.6 | |
| 6.7 | |
| 8 | |
| 2241@12V | |
| 567 | |
| 2140 | |
| 7.5|4 | |
| 22.5|17.5 | |
| 18.6|27.2 | |
| 15.7|8.7 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this NTD4856NT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 2140 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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