| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2.5 | |
| 16.8 | |
| 4.7@10V | |
| 18@4.5V|38@10V | |
| 38 | |
| 6.6 | |
| 6.7 | |
| 8 | |
| 2241@12V | |
| 567 | |
| 2140 | |
| 7.5|4 | |
| 22.5|17.5 | |
| 18.6|27.2 | |
| 15.7|8.7 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this NTD4856NT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 2140 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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