| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±15 | |
| 2 | |
| -55 to 175 | |
| 18 | |
| 100 | |
| 1 | |
| 65@5V | |
| 11@5V | |
| 57 | |
| 482@25V | |
| 56@25V | |
| 1 | |
| 166 | |
| 55000 | |
| 38 | |
| 79 | |
| 19 | |
| 9.9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 54@5V | |
| 2.1 | |
| 54 | |
| 100 | |
| 0.94 | |
| 4.1 | |
| 41 | |
| 1.15 | |
| 1.8 | |
| 15 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this NTD18N06LT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 55000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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