| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±15 | |
| 4 | |
| -55 to 175 | |
| 27.5 | |
| 100 | |
| 10 | |
| 82@10V | |
| 33@10V | |
| 33 | |
| 200 | |
| 1200@25V | |
| 90@25V | |
| 2 | |
| 345 | |
| 120000 | |
| 190 | |
| 72 | |
| 43 | |
| 14 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 70@10V | |
| 15 | |
| 80 | |
| 63.2 | |
| 1.8 | |
| 6 | |
| 70 | |
| 2.5 | |
| 2.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.45 |
| Largeur du paquet | 9.15 |
| Longueur du paquet | 9.97 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this NTB25P06T4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 120000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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