| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±6 | |
| 1.2 | |
| -55 to 150 | |
| 0.76 | |
| 10000 | |
| 0.1 | |
| 360@4.5V | |
| 2.1@4.5V | |
| 0.5 | |
| 0.325 | |
| 156@5V | |
| 18@5V | |
| 0.45 | |
| 28 | |
| 301 | |
| 20.4 | |
| 8.2 | |
| 29 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 260@4.5V|350@2.5V|490@1.8V | |
| 6 | |
| 0.76 | |
| 0.301 | |
| 1 | |
| 415 | |
| 0.72 | |
| 1.35 | |
| 1.1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-416 |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NTA4151PT1G power MOSFET. Its maximum power dissipation is 301 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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