| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 6 | |
| -55 to 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 347 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.37 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 0.6 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-1123 |
| 3 | |
| Forme de sonde | Flat |
Superior characteristics of this NST847BF3T5G RF amplifier from ON Semiconductor make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This product's minimum DC current gain is 200@2mA@5 V. It has a maximum collector emitter saturation voltage of 0.25@0.5mA@10mA|0.6@5mA@100mA V. This RF transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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