| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Quad Collector | |
| 1 | |
| 50 | |
| 30 | |
| 5 | |
| 1.1@0.1A@1A | |
| 0.075@1mA@0.1A|0.125@50mA@0.5A|0.2@100mA@1A | |
| 2 | |
| 300@0.5A@5V|200@1A@5V|300@1mA@5V | |
| 1180 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.5 mm |
| Longueur du paquet | 3 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
The NPN NSS30201MR6T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1180 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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